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Long-range ferromagnetic ordering in vanadium-doped WSe2 semiconductor

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dc.contributor.authorDinh Loc Duong-
dc.contributor.authorSeok Joon Yun-
dc.contributor.authorYoungkuk Kim-
dc.contributor.authorSeong-Gon Kim-
dc.contributor.authorYoung Hee Lee-
dc.date.available2020-01-31T00:50:38Z-
dc.date.created2020-01-07-
dc.date.issued2019-12-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/6711-
dc.description.abstract© 2019 Author(s).We report long-range ferromagnetic ordering in a vanadium-doped monolayer WSe2 semiconductor using spin-polarized density functional calculations. We found that the vanadium dopant is located in the fully occupied state inside the valence band, inherent from spin-orbit coupling, leading to the presence of free holes in the valence band. As a consequence, the spin-polarized hole carriers are delocalized not only in the vanadium site but also persistently in the tungsten sites distant from vanadium to facilitate the long-range ferromagnetic ordering in the vanadium-doped monolayer WSe2. Our findings of this study pave the way for the future exploration of carrier-mediated room-temperature two-dimensional ferromagnetic semiconductors via magnetic dopants-
dc.description.uri1-
dc.language영어-
dc.publisherAMER INST PHYSICS-
dc.titleLong-range ferromagnetic ordering in vanadium-doped WSe2 semiconductor-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000505734100012-
dc.identifier.scopusid2-s2.0-85076821915-
dc.identifier.rimsid71032-
dc.contributor.affiliatedAuthorDinh Loc Duong-
dc.contributor.affiliatedAuthorSeok Joon Yun-
dc.contributor.affiliatedAuthorYoungkuk Kim-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1063/1.5131566-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.115, no.24, pp.242406-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume115-
dc.citation.number24-
dc.citation.startPage242406-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusSINGLE-LAYER MOS2-
dc.subject.keywordPlusMAGNETIC-PROPERTIES-
dc.subject.keywordPlusELECTRONIC STATES-
dc.subject.keywordPlusATOMIC-STRUCTURE-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusFUNCTIONALIZATION-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusDOPANTS-
dc.subject.keywordPlusBAND-
dc.subject.keywordPlusCR-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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