Long-range ferromagnetic ordering in vanadium-doped WSe2 semiconductor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dinh Loc Duong | - |
dc.contributor.author | Seok Joon Yun | - |
dc.contributor.author | Youngkuk Kim | - |
dc.contributor.author | Seong-Gon Kim | - |
dc.contributor.author | Young Hee Lee | - |
dc.date.available | 2020-01-31T00:50:38Z | - |
dc.date.created | 2020-01-07 | - |
dc.date.issued | 2019-12 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/6711 | - |
dc.description.abstract | © 2019 Author(s).We report long-range ferromagnetic ordering in a vanadium-doped monolayer WSe2 semiconductor using spin-polarized density functional calculations. We found that the vanadium dopant is located in the fully occupied state inside the valence band, inherent from spin-orbit coupling, leading to the presence of free holes in the valence band. As a consequence, the spin-polarized hole carriers are delocalized not only in the vanadium site but also persistently in the tungsten sites distant from vanadium to facilitate the long-range ferromagnetic ordering in the vanadium-doped monolayer WSe2. Our findings of this study pave the way for the future exploration of carrier-mediated room-temperature two-dimensional ferromagnetic semiconductors via magnetic dopants | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Long-range ferromagnetic ordering in vanadium-doped WSe2 semiconductor | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000505734100012 | - |
dc.identifier.scopusid | 2-s2.0-85076821915 | - |
dc.identifier.rimsid | 71032 | - |
dc.contributor.affiliatedAuthor | Dinh Loc Duong | - |
dc.contributor.affiliatedAuthor | Seok Joon Yun | - |
dc.contributor.affiliatedAuthor | Youngkuk Kim | - |
dc.contributor.affiliatedAuthor | Young Hee Lee | - |
dc.identifier.doi | 10.1063/1.5131566 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.115, no.24, pp.242406 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 115 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 242406 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | SINGLE-LAYER MOS2 | - |
dc.subject.keywordPlus | MAGNETIC-PROPERTIES | - |
dc.subject.keywordPlus | ELECTRONIC STATES | - |
dc.subject.keywordPlus | ATOMIC-STRUCTURE | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | FUNCTIONALIZATION | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DOPANTS | - |
dc.subject.keywordPlus | BAND | - |
dc.subject.keywordPlus | CR | - |