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나노 구조 물리 연구단
나노구조물리 연구단
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Electrically tunable quantum emitters in an ultrathin graphene-hexagonal boron nitride van der Waals heterostructure

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Title
Electrically tunable quantum emitters in an ultrathin graphene-hexagonal boron nitride van der Waals heterostructure
Author(s)
Alessio Scavuzzo; Shai Mangel; Ji-Hoon Park; Sanghyup Lee; Dinh Loc Duong; Christian Strelow; Alf Mews; Marko Burghard; Klaus Kern
Publication Date
2019-02
Journal
APPLIED PHYSICS LETTERS, v.114, no.6, pp.062104 -
Publisher
AMER INST PHYSICS
Abstract
We explore the photoluminescence (PL) properties of hexagonal boron nitride (h-BN) quantum emitters embedded within atomically thin graphene/h-BN heterostructures fabricated by mechanical transfer. Stable light emission could be observed from h-BN emitters which due to the local presence of multilayer h-BN are not subject to fluorescence quenching by graphene. By using graphene as a top gate contact, the PL emission can be tuned by up to 24 meV per V/nm, with a high robustness of the emitters over several voltage sweep cycles. Two different types of h-BN emitters were observed, one with a quadratic and the other one with a linear Stark shift. Moreover, the vertical electric field leads to an asymmetric modulation of both the fluorescence intensity and lifetime between the negative and positive gate voltage regimes. The overall behavior can be well explained by a model involving different rates for electron and hole tunneling between the h-BN and graphene layers. Our findings suggest ultrathin van der Waals heterostructures as valuable platforms for fine tuning the optoelectronic properties of atomic defect-based quantum emitters. Published under license by AIP Publishing.
URI
https://pr.ibs.re.kr/handle/8788114/5902
ISSN
0003-6951
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Appl. Phys. Lett_Electrically tunable_Loc.pdfDownload

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