BROWSE

Related Scientist

cinap's photo.

cinap
나노구조물리연구단
more info

ITEM VIEW & DOWNLOAD

Electrically tunable quantum emitters in an ultrathin graphene-hexagonal boron nitride van der Waals heterostructure

DC Field Value Language
dc.contributor.authorAlessio Scavuzzo-
dc.contributor.authorShai Mangel-
dc.contributor.authorJi-Hoon Park-
dc.contributor.authorSanghyup Lee-
dc.contributor.authorDinh Loc Duong-
dc.contributor.authorChristian Strelow-
dc.contributor.authorAlf Mews-
dc.contributor.authorMarko Burghard-
dc.contributor.authorKlaus Kern-
dc.date.available2019-07-19T05:39:53Z-
dc.date.created2019-03-18-
dc.date.issued2019-02-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5902-
dc.description.abstractWe explore the photoluminescence (PL) properties of hexagonal boron nitride (h-BN) quantum emitters embedded within atomically thin graphene/h-BN heterostructures fabricated by mechanical transfer. Stable light emission could be observed from h-BN emitters which due to the local presence of multilayer h-BN are not subject to fluorescence quenching by graphene. By using graphene as a top gate contact, the PL emission can be tuned by up to 24 meV per V/nm, with a high robustness of the emitters over several voltage sweep cycles. Two different types of h-BN emitters were observed, one with a quadratic and the other one with a linear Stark shift. Moreover, the vertical electric field leads to an asymmetric modulation of both the fluorescence intensity and lifetime between the negative and positive gate voltage regimes. The overall behavior can be well explained by a model involving different rates for electron and hole tunneling between the h-BN and graphene layers. Our findings suggest ultrathin van der Waals heterostructures as valuable platforms for fine tuning the optoelectronic properties of atomic defect-based quantum emitters. Published under license by AIP Publishing.-
dc.description.uri1-
dc.language영어-
dc.publisherAMER INST PHYSICS-
dc.titleElectrically tunable quantum emitters in an ultrathin graphene-hexagonal boron nitride van der Waals heterostructure-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000458982300015-
dc.identifier.scopusid2-s2.0-85061642787-
dc.identifier.rimsid67501-
dc.contributor.affiliatedAuthorJi-Hoon Park-
dc.contributor.affiliatedAuthorSanghyup Lee-
dc.contributor.affiliatedAuthorDinh Loc Duong-
dc.identifier.doi10.1063/1.5067385-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.114, no.6, pp.062104-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume114-
dc.citation.number6-
dc.citation.startPage062104-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusSINGLE-PHOTON EMITTERS-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusDEFECTS-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Appl. Phys. Lett_Electrically tunable_Loc.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse