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나노 구조 물리 연구단
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Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure

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Title
Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure
Author(s)
Ngoc Thanh Duong; Seungho Bang; Seung Mi Lee; Dang Xuan Dang; Dong Hoon Kuem; Juchan Lee; Mun Seok Jeong; Seong Chu Lim
Publication Date
2018-07
Journal
NANOSCALE, v.10, no.26, pp.12322 - 12329
Publisher
ROYAL SOC CHEMISTRY
Abstract
The I-ds-V-ds properties of a van der Waals cross-junction of few layered MoS2/MoTe2 were investigated, and the physical device parameters were altered in order to transform the conduction mechanism from thermionic emission to interband tunneling. The pristine heterostructure demonstrated rectification behavior of typical p-n junction diodes, because of the p-type and n-type nature of MoTe2 and MoS2, respectively. Lowering the contact resistance between the metal and channel materials, by changing the electrode metals from Au to Pd and Ti, alone did not give rise to carrier conduction through the hetero-interband tunneling between MoTe2 and MoS2. In addition to the reduction in contact resistance, the chemical doping of MoS2 using Benzyl Viologen (BV) achieves hetero-interband tunneling between MoTe2 and MoS2, which probably narrows the depletion layer by degenerating MoS2. The peak-to-valley ratio of the tunneling current of the BV-doped heterostructure of MoS2/MoTe2 is about 4.8, which is comparable to that of the commercially available Si tunneling diode
URI
https://pr.ibs.re.kr/handle/8788114/5548
ISSN
2040-3364
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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