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강상관계 물질 연구단
강상관계 물질 연구단
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Unconventional anomalous Hall effect from antiferromagnetic domain walls of N d2 i r2 O7 thin films

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Title
Unconventional anomalous Hall effect from antiferromagnetic domain walls of N d2 i r2 O7 thin films
Author(s)
Woo Jin Kim; John H. Gruenewald; Taekoo Oh; Sangmo Cheon; Bongju Kim; Oleksandr B. Korneta; Hwanbeom Cho; Daesu Lee; Yoonkoo Kim; Miyoung Kim; Je-Geun Park; Bohm-Jung Yang; Ambrose Seo; Tae Won Noh
Publication Date
2018-09
Journal
PHYSICAL REVIEW B, v.98, no.12, pp.125103 -
Publisher
AMER PHYSICAL SOC
Abstract
Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet with noncoplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs of a noncoplanar antiferromagnet, Nd2Ir2O7. Bulk Nd2Ir2O7 has a cubic symmetry; thus, its Hall signal should be zero without an applied magnetic field. The DWs generated in this material break the twofold rotational symmetry, which allows for finite anomalous Hall conductivity. A strong f-d exchange interaction between the Nd and Ir magnetic moments significantly influences antiferromagnetic (AFM) domain switching. Our epitaxial Nd2Ir2O7 thin film showed a large enhancement of the AHE signal when the AFM domains switched, indicating that the AHE is mainly due to DWs. Our paper highlights the symmetry-broken interface of AFM materials as a means of exploring topological effects and their relevant applications. © 2018 American Physical Society
URI
https://pr.ibs.re.kr/handle/8788114/5199
ISSN
2469-9950
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
2018-257_Unconventional anomalous Hall effect from antiferromagnetic domain walls of Nd2Ir2O7 thin films.pdfDownload

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