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강상관계물질연구단
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Unconventional anomalous Hall effect from antiferromagnetic domain walls of N d2 i r2 O7 thin films

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dc.contributor.authorWoo Jin Kim-
dc.contributor.authorJohn H. Gruenewald-
dc.contributor.authorTaekoo Oh-
dc.contributor.authorSangmo Cheon-
dc.contributor.authorBongju Kim-
dc.contributor.authorOleksandr B. Korneta-
dc.contributor.authorHwanbeom Cho-
dc.contributor.authorDaesu Lee-
dc.contributor.authorYoonkoo Kim-
dc.contributor.authorMiyoung Kim-
dc.contributor.authorJe-Geun Park-
dc.contributor.authorBohm-Jung Yang-
dc.contributor.authorAmbrose Seo-
dc.contributor.authorTae Won Noh-
dc.date.available2019-01-03T05:32:55Z-
dc.date.created2018-10-15-
dc.date.issued2018-09-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5199-
dc.description.abstractFerroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet with noncoplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs of a noncoplanar antiferromagnet, Nd2Ir2O7. Bulk Nd2Ir2O7 has a cubic symmetry; thus, its Hall signal should be zero without an applied magnetic field. The DWs generated in this material break the twofold rotational symmetry, which allows for finite anomalous Hall conductivity. A strong f-d exchange interaction between the Nd and Ir magnetic moments significantly influences antiferromagnetic (AFM) domain switching. Our epitaxial Nd2Ir2O7 thin film showed a large enhancement of the AHE signal when the AFM domains switched, indicating that the AHE is mainly due to DWs. Our paper highlights the symmetry-broken interface of AFM materials as a means of exploring topological effects and their relevant applications. © 2018 American Physical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER PHYSICAL SOC-
dc.titleUnconventional anomalous Hall effect from antiferromagnetic domain walls of N d2 i r2 O7 thin films-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000443672000008-
dc.identifier.scopusid2-s2.0-85053125938-
dc.identifier.rimsid65810-
dc.contributor.affiliatedAuthorWoo Jin Kim-
dc.contributor.affiliatedAuthorTaekoo Oh-
dc.contributor.affiliatedAuthorBongju Kim-
dc.contributor.affiliatedAuthorOleksandr B. Korneta-
dc.contributor.affiliatedAuthorHwanbeom Cho-
dc.contributor.affiliatedAuthorDaesu Lee-
dc.contributor.affiliatedAuthorJe-Geun Park-
dc.contributor.affiliatedAuthorBohm-Jung Yang-
dc.contributor.affiliatedAuthorTae Won Noh-
dc.identifier.doi10.1103/PhysRevB.98.125103-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.98, no.12, pp.125103-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume98-
dc.citation.number12-
dc.citation.startPage125103-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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