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Selective control of electron and hole tunneling in 2D assembly

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Title
Selective control of electron and hole tunneling in 2D assembly
Author(s)
Dongil Chu; Young Hee Lee; Eun Kyu Kim
Publication Date
2017-04
Journal
SCIENCE ADVANCES, v.3, no.4, pp.e1602726 -
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
Abstract
Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, "carristor") with a configuration similar to the metal-insulator-semiconductor structure is introduced in this work. Superior functionalities, such as a current rectification ratio of up to 400,000 and a switching ratio of higher than 106 at room temperature, are realized by quantum-mechanical tunneling of majority and minority carriers across the barrier. These carristors have a potential application as the fundamental building block of low-power consumption electronics (c) The Authors. Article funded by SCOAP3.
URI
http://pr.ibs.re.kr/handle/8788114/4462
DOI
10.1126/sciadv.1602726
ISSN
2375-2548
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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