Selective control of electron and hole tunneling in 2D assembly
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dongil Chu | - |
dc.contributor.author | Young Hee Lee | - |
dc.contributor.author | Eun Kyu Kim | - |
dc.date.available | 2018-04-27T06:31:30Z | - |
dc.date.created | 2018-03-15 | ko |
dc.date.issued | 2017-04 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/4462 | - |
dc.description.abstract | Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, "carristor") with a configuration similar to the metal-insulator-semiconductor structure is introduced in this work. Superior functionalities, such as a current rectification ratio of up to 400,000 and a switching ratio of higher than 106 at room temperature, are realized by quantum-mechanical tunneling of majority and minority carriers across the barrier. These carristors have a potential application as the fundamental building block of low-power consumption electronics (c) The Authors. Article funded by SCOAP3. | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER ASSOC ADVANCEMENT SCIENCE | - |
dc.title | Selective control of electron and hole tunneling in 2D assembly | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000401954800044 | - |
dc.identifier.scopusid | 2-s2.0-85042040261 | - |
dc.identifier.rimsid | 62453 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Young Hee Lee | - |
dc.identifier.doi | 10.1126/sciadv.1602726 | - |
dc.identifier.bibliographicCitation | SCIENCE ADVANCES, v.3, no.4, pp.e1602726 | - |
dc.citation.title | SCIENCE ADVANCES | - |
dc.citation.volume | 3 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | e1602726 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 3 | - |
dc.description.scptc | 3 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | GRAPHENE HETEROSTRUCTURES | - |
dc.subject.keywordPlus | BAND-GAP | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | WS2 | - |
dc.subject.keywordPlus | HETEROJUNCTION | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | DIODES | - |