Superior Dielectric Screening in Two-Dimensional MoS2 Spirals

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Title
Superior Dielectric Screening in Two-Dimensional MoS2 Spirals
Author(s)
Thuc Hue Ly; Hyun Kim; Quoc Huy Thi; Shu Ping Lau; Jiong Zhao
Publication Date
2017-11
Journal
ACS APPLIED MATERIALS & INTERFACES, v.9, no.43, pp.37941 - 37946
Publisher
AMER CHEMICAL SOC
Abstract
Metals have the best dielectric screening capability among all materials; however, it is usually difficult to fabricate continuous and uniform ultrathin (few-atomic-layer thickness) metal films. Conversely, high-quality atomic-thick semiconductor or semimetal materials (so called two-dimensional materials) such as graphene or MoS2 can be readily obtained and robust in ambient conditions; however, their dielectric screening capabilities are greatly reduced by their reduced dimensionality. Particularly, in the vertical direction, the dielectric screening of two-dimensional materials is insufficient; thus, the performances of devices by two-dimensional materials were easily affected by the coulomb-scattering or other kind of sources. Herein, we propose that with a screw dislocation connecting the van der Waals layers in two-dimensional MoS2 spiral structures, excellent dielectric screening in the vertical direction can be achieved. Our Kelvin force microscopy directly demonstrates that the external impurity charges can be perfectly screened by a theoretically minimum number of layers (two layers) in the MoS2 spirals. This spiral structure-assisted screening approach paves new way to the design of high-performance ultrathin electrical and optical devices. © 2017 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/4018
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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