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Superior Dielectric Screening in Two-Dimensional MoS2 Spirals

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dc.contributor.authorThuc Hue Ly-
dc.contributor.authorHyun Kim-
dc.contributor.authorQuoc Huy Thi-
dc.contributor.authorShu Ping Lau-
dc.contributor.authorJiong Zhao-
dc.date.available2017-12-08T00:47:20Z-
dc.date.created2017-11-17-
dc.date.issued2017-11-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/4018-
dc.description.abstractMetals have the best dielectric screening capability among all materials; however, it is usually difficult to fabricate continuous and uniform ultrathin (few-atomic-layer thickness) metal films. Conversely, high-quality atomic-thick semiconductor or semimetal materials (so called two-dimensional materials) such as graphene or MoS2 can be readily obtained and robust in ambient conditions; however, their dielectric screening capabilities are greatly reduced by their reduced dimensionality. Particularly, in the vertical direction, the dielectric screening of two-dimensional materials is insufficient; thus, the performances of devices by two-dimensional materials were easily affected by the coulomb-scattering or other kind of sources. Herein, we propose that with a screw dislocation connecting the van der Waals layers in two-dimensional MoS2 spiral structures, excellent dielectric screening in the vertical direction can be achieved. Our Kelvin force microscopy directly demonstrates that the external impurity charges can be perfectly screened by a theoretically minimum number of layers (two layers) in the MoS2 spirals. This spiral structure-assisted screening approach paves new way to the design of high-performance ultrathin electrical and optical devices. © 2017 American Chemical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectKelvin force microscopy-
dc.subjectmolybdenum disulfide-
dc.subjectscreening-
dc.subjectspiral-
dc.subjectthickness dependence-
dc.titleSuperior Dielectric Screening in Two-Dimensional MoS2 Spirals-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000414506600048-
dc.identifier.scopusid2-s2.0-85032677956-
dc.identifier.rimsid60897-
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorHyun Kim-
dc.contributor.affiliatedAuthorQuoc Huy Thi-
dc.identifier.doi10.1021/acsami.7b11468-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.9, no.43, pp.37941 - 37946-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume9-
dc.citation.number43-
dc.citation.startPage37941-
dc.citation.endPage37946-
dc.date.scptcdate2018-10-01-
dc.description.scptc1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusWORK FUNCTION-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusLAYER MOS2-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusENERGY-
dc.subject.keywordPlusWS2-
dc.subject.keywordAuthormolybdenum disulfide-
dc.subject.keywordAuthorspiral-
dc.subject.keywordAuthorKelvin force microscopy-
dc.subject.keywordAuthorscreening thickness dependence-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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