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나노 구조 물리 연구단
나노구조물리 연구단
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Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity

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Title
Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity
Author(s)
Quoc An Vu; Jin Hee Lee; Van Luan Nguyen; Yong Seon Shin; Seong Chu Lim; Kiyoung Lee; Jinseong Heo; Seongjun Park; Kunnyun Kim; Young Hee Lee; Woo Jong Yu
Publication Date
2017-01
Journal
NANO LETTERS, v.17, no.1, pp.453 - 459
Publisher
AMER CHEMICAL SOC
Abstract
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for photodetection over a wide range of visible wavelengths. Photodetection is generally realized via a phototransistor, photoconductor, p-n junction photovoltaic device, and thermoelectric device. The photodetectivity, which is a primary parameter in photo detector design, is often limited by either low photoresponsivity or a high dark current in TMDs materials. Here, we demonstrated a highly sensitive photodetector with a MoS2/h-BN/graphene heterostructure, by inserting a h-BN insulating layer between graphene electrode and MoS2 photoabsorber the dark-carriers were highly suppressed by the large electron barrier (2.7 eV) at the graphene/h-BN junction while the photocarriers were effectively tunneled through small hole barrier (1.2 eV) at the MoS2/h-BN junction. With both high photocurrent/dark current ratio (>10(5)) and high photoresponsivity (180 AW(-1)), ultrahigh photodetectivity of 2.6 x 10(13) Jones was obtained at 7 nth. thick h-BN, about 100-1000 times higher than that of previously reported MoS2-based devices
URI
https://pr.ibs.re.kr/handle/8788114/3490
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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