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Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity

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dc.contributor.authorQuoc An Vu-
dc.contributor.authorJin Hee Lee-
dc.contributor.authorVan Luan Nguyen-
dc.contributor.authorYong Seon Shin-
dc.contributor.authorSeong Chu Lim-
dc.contributor.authorKiyoung Lee-
dc.contributor.authorJinseong Heo-
dc.contributor.authorSeongjun Park-
dc.contributor.authorKunnyun Kim-
dc.contributor.authorYoung Hee Lee-
dc.contributor.authorWoo Jong Yu-
dc.date.available2017-05-19T01:13:27Z-
dc.date.created2017-02-24-
dc.date.issued2017-01-
dc.identifier.issn1530-6984-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3490-
dc.description.abstractSemiconducting transition metal dichalcogenides (TMDs) are promising materials for photodetection over a wide range of visible wavelengths. Photodetection is generally realized via a phototransistor, photoconductor, p-n junction photovoltaic device, and thermoelectric device. The photodetectivity, which is a primary parameter in photo detector design, is often limited by either low photoresponsivity or a high dark current in TMDs materials. Here, we demonstrated a highly sensitive photodetector with a MoS2/h-BN/graphene heterostructure, by inserting a h-BN insulating layer between graphene electrode and MoS2 photoabsorber the dark-carriers were highly suppressed by the large electron barrier (2.7 eV) at the graphene/h-BN junction while the photocarriers were effectively tunneled through small hole barrier (1.2 eV) at the MoS2/h-BN junction. With both high photocurrent/dark current ratio (>10(5)) and high photoresponsivity (180 AW(-1)), ultrahigh photodetectivity of 2.6 x 10(13) Jones was obtained at 7 nth. thick h-BN, about 100-1000 times higher than that of previously reported MoS2-based devices-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectTwo-dimensional material-
dc.subjectmolybdenum disulfide-
dc.subjecthexagonal boron nitrite-
dc.subjecthigh detectivity-
dc.subjectheterostructure-
dc.subjectphotodetector-
dc.titleTuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000392036600064-
dc.identifier.scopusid2-s2.0-85018362463-
dc.identifier.rimsid58819ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorQuoc An Vu-
dc.contributor.affiliatedAuthorJin Hee Lee-
dc.contributor.affiliatedAuthorVan Luan Nguyen-
dc.contributor.affiliatedAuthorSeong Chu Lim-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1021/acs.nanolett.6b04449-
dc.identifier.bibliographicCitationNANO LETTERS, v.17, no.1, pp.453 - 459-
dc.relation.isPartOfNANO LETTERS-
dc.citation.titleNANO LETTERS-
dc.citation.volume17-
dc.citation.number1-
dc.citation.startPage453-
dc.citation.endPage459-
dc.date.scptcdate2017-02-24-
dc.description.wostc18-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusSINGLE-LAYER MOS2-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusPHOTOCURRENT GENERATION-
dc.subject.keywordPlusMEMORY DEVICES-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusPHOTODETECTORS-
dc.subject.keywordPlusOPTOELECTRONICS-
dc.subject.keywordPlusULTRAVIOLET-
dc.subject.keywordPlusDIODES-
dc.subject.keywordAuthorTwo-dimensional material-
dc.subject.keywordAuthormolybdenum disulfide-
dc.subject.keywordAuthorhexagonal boron nitrite-
dc.subject.keywordAuthorhigh detectivity-
dc.subject.keywordAuthorheterostructure-
dc.subject.keywordAuthorphotodetector-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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