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나노 구조 물리 연구단
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Photocurrent Switching of Monolayer MoS2 Using a Metal-Insulator Transition

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Title
Photocurrent Switching of Monolayer MoS2 Using a Metal-Insulator Transition
Author(s)
Jin Hee Lee; Hamza Zad Gul; Hyun Kim; Byoung Hee Moon; Subash Adhikari; Jung Ho Kim; Homin Choi; Young Hee Lee; Seong Chu Lim
Publication Date
2017-02
Journal
NANO LETTERS, v.17, no.2, pp.673 - 678
Publisher
AMER CHEMICAL SOC
Abstract
We achieve switching on/off the photocurrent of monolayer molybdenum disulfide (MoS2) by controlling the metal-insulator transition (MIT). N-type semiconducting MoS2 under a large negative gate bias generates a photocurrent attributed to the increase of excess carriers in the conduction band by optical excitation. However, under a large positive gate bias, a phase shift from semiconducting to metallic MoS2 is caused, and the photocurrent by excess carriers in the conduction band induced by the laser disappears due to enhanced electron-electron scattering. Thus, no photocurrent is detected in metallic MoS2. Our results indicate that the photocurrent of MoS2 can be switched on/off by appropriately controlling the MIT transition by means of gate bias. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3460
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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