Photocurrent Switching of Monolayer MoS2 Using a Metal-Insulator Transition
DC Field | Value | Language |
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dc.contributor.author | Jin Hee Lee | - |
dc.contributor.author | Hamza Zad Gul | - |
dc.contributor.author | Hyun Kim | - |
dc.contributor.author | Byoung Hee Moon | - |
dc.contributor.author | Subash Adhikari | - |
dc.contributor.author | Jung Ho Kim | - |
dc.contributor.author | Homin Choi | - |
dc.contributor.author | Young Hee Lee | - |
dc.contributor.author | Seong Chu Lim | - |
dc.date.available | 2017-05-19T01:12:50Z | - |
dc.date.created | 2017-02-24 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/3460 | - |
dc.description.abstract | We achieve switching on/off the photocurrent of monolayer molybdenum disulfide (MoS2) by controlling the metal-insulator transition (MIT). N-type semiconducting MoS2 under a large negative gate bias generates a photocurrent attributed to the increase of excess carriers in the conduction band by optical excitation. However, under a large positive gate bias, a phase shift from semiconducting to metallic MoS2 is caused, and the photocurrent by excess carriers in the conduction band induced by the laser disappears due to enhanced electron-electron scattering. Thus, no photocurrent is detected in metallic MoS2. Our results indicate that the photocurrent of MoS2 can be switched on/off by appropriately controlling the MIT transition by means of gate bias. © 2016 American Chemical Society | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | electron-electron scattering | - |
dc.subject | metal-insulator transition | - |
dc.subject | MoS2 | - |
dc.subject | optical phonon scattering | - |
dc.subject | photocurrent switching | - |
dc.title | Photocurrent Switching of Monolayer MoS2 Using a Metal-Insulator Transition | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000393848800011 | - |
dc.identifier.scopusid | 2-s2.0-85012034045 | - |
dc.identifier.rimsid | 58849 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Jin Hee Lee | - |
dc.contributor.affiliatedAuthor | Hamza Zad Gul | - |
dc.contributor.affiliatedAuthor | Hyun Kim | - |
dc.contributor.affiliatedAuthor | Byoung Hee Moon | - |
dc.contributor.affiliatedAuthor | Subash Adhikari | - |
dc.contributor.affiliatedAuthor | Jung Ho Kim | - |
dc.contributor.affiliatedAuthor | Homin Choi | - |
dc.contributor.affiliatedAuthor | Young Hee Lee | - |
dc.contributor.affiliatedAuthor | Seong Chu Lim | - |
dc.identifier.doi | 10.1021/acs.nanolett.6b03689 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.17, no.2, pp.673 - 678 | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 17 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 673 | - |
dc.citation.endPage | 678 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 5 | - |
dc.description.scptc | 6 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SINGLE-LAYER MOS2 | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | PHOTOCONDUCTIVITY | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | MICROSCOPY | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | metal-insulator transition | - |
dc.subject.keywordAuthor | photocurrent switching | - |
dc.subject.keywordAuthor | optical phonon scattering | - |
dc.subject.keywordAuthor | electron-electron scattering | - |