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IBS Publications RepositoryCenter for Integrated Nanostructure Physics(나노구조물리 연구단)1. Journal Papers (저널논문)
High Performance Graphene-Oxide-Metal Diode through Bias-Induced Barrier Height Modulation
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- Title
- High Performance Graphene-Oxide-Metal Diode through Bias-Induced Barrier Height Modulation
- Author(s)
- Roberto Urcuyo; Dinh Loc Duong; Hye Yun Jeong; Marko Burghard; Klaus Kern
- Publication Date
- 2016-09
- Journal
- ADVANCED ELECTRONIC MATERIALS, v.2, no.9, pp.1600223
- Publisher
- WILEY
- Abstract
- Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- ISSN
- 2199-160X
- Appears in Collections:
- Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
- Files in This Item:
- High Performance-Advanced Electronic Materials-HyeYun Jeong.pdfDownload
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Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
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