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나노 구조 물리 연구단
나노구조물리 연구단
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High Performance Graphene-Oxide-Metal Diode through Bias-Induced Barrier Height Modulation

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Title
High Performance Graphene-Oxide-Metal Diode through Bias-Induced Barrier Height Modulation
Author(s)
Roberto Urcuyo; Dinh Loc Duong; Hye Yun Jeong; Marko Burghard; Klaus Kern
Publication Date
2016-09
Journal
Advanced Electronic Materials, v.2, no.9, pp.1600223 -
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/3277
ISSN
2199-160X
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
High Performance-Advanced Electronic Materials-HyeYun Jeong.pdfDownload

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