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High Performance Graphene-Oxide-Metal Diode through Bias-Induced Barrier Height Modulation

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Title
High Performance Graphene-Oxide-Metal Diode through Bias-Induced Barrier Height Modulation
Author(s)
Roberto Urcuyo; Dinh Loc Duong; Hye Yun Jeong; Marko Burghard; Klaus Kern
Publication Date
2016-09
Journal
ADVANCED ELECTRONIC MATERIALS, v.2, no.9, pp.1600223
Publisher
WILEY
Abstract
Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/3277
DOI
10.1002/aelm.201600223
ISSN
2199-160X
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
High Performance-Advanced Electronic Materials-HyeYun Jeong.pdfDownload

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