IBS Publications Repository: High Performance Graphene-Oxide-Metal Diode through Bias-Induced Barrier Height Modulation

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IBS Publications RepositoryCenter for Integrated Nanostructure Physics(나노구조물리 연구단)1. Journal Papers (저널논문)

High Performance Graphene-Oxide-Metal Diode through Bias-Induced Barrier Height Modulation

DC Field	Value	Language
dc.contributor.author	Roberto Urcuyo	-
dc.contributor.author	Dinh Loc Duong	-
dc.contributor.author	Hye Yun Jeong	-
dc.contributor.author	Marko Burghard	-
dc.contributor.author	Klaus Kern	-
dc.date.available	2017-01-20T08:31:44Z	-
dc.date.created	2016-11-23	-
dc.date.issued	2016-09	-
dc.identifier.issn	2199-160X	-
dc.identifier.uri	https://pr.ibs.re.kr/handle/8788114/3277	-
dc.description.abstract	Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	-
dc.language	영어	-
dc.publisher	WILEY	-
dc.title	High Performance Graphene-Oxide-Metal Diode through Bias-Induced Barrier Height Modulation	-
dc.type	Article	-
dc.type.rims	ART	-
dc.identifier.wosid	000384455800016	-
dc.identifier.scopusid	2-s2.0-84979082228	-
dc.identifier.rimsid	57683	ko
dc.date.tcdate	2018-10-01	-
dc.contributor.affiliatedAuthor	Hye Yun Jeong	-
dc.identifier.doi	10.1002/aelm.201600223	-
dc.identifier.bibliographicCitation	ADVANCED ELECTRONIC MATERIALS, v.2, no.9, pp.1600223	-
dc.relation.isPartOf	ADVANCED ELECTRONIC MATERIALS	-
dc.citation.title	ADVANCED ELECTRONIC MATERIALS	-
dc.citation.volume	2	-
dc.citation.number	9	-
dc.citation.startPage	1600223	-
dc.date.scptcdate	2018-10-01	-
dc.description.wostc	5	-
dc.description.scptc	6	-
dc.description.journalClass	1	-
dc.description.journalClass	1	-
dc.description.journalRegisteredClass	scie	-
dc.description.journalRegisteredClass	scopus	-
dc.relation.journalWebOfScienceCategory	Nanoscience & Nanotechnology	-
dc.relation.journalWebOfScienceCategory	Materials Science, Multidisciplinary	-
dc.relation.journalWebOfScienceCategory	Physics, Applied	-
dc.subject.keywordPlus	FIELD-EFFECT TRANSISTORS	-
dc.subject.keywordPlus	SELECTIVE TIO2 CONTACT	-
dc.subject.keywordPlus	RECTIFICATION	-
dc.subject.keywordPlus	FABRICATION	-
dc.subject.keywordPlus	FILM	-
dc.subject.keywordAuthor	graphene	-
dc.subject.keywordAuthor	metal–insulator–metal diodes	-
dc.subject.keywordAuthor	work function modulation	-