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Influence of residual promoter to photoluminescence of CVD grown MoS2

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Title
Influence of residual promoter to photoluminescence of CVD grown MoS2
Author(s)
Hye Min Oh; Gang Hee Han; Hyun Kim; Mun Seok Jeong
Publication Date
2016-09
Journal
CURRENT APPLIED PHYSICS, v.16, no.9, pp.1223 - 1228
Publisher
ELSEVIER SCIENCE BV
Abstract
Monolayer MoS2 has attracted extensive attention owing to its promising applications in optoelectronic devices. Recently, uniform and highly crystalline monolayer MoS2 was grown through chemical vapor deposition (CVD) using seed materials as a growth promoter. However, residual seed materials can remain on the surface of a monolayer MoS2 flake on a SiO2/Si substrate after growth. Here, we observe drastically increased photoluminescence (PL) intensity at the edge of MoS2 flake where residual particles are attached after repeated laser irradiation. On the other hand, the PL intensity of pure MoS2 remained almost the same. We attribute this to the effect of p-doping of the edge MoS2 by the adsorbed H2O and O2 molecules in the residual particles. The p-doping effect of MoS2 is confirmed by the confocal PL and Raman spectroscopy analysis. © 2016 Elsevier B.V
URI
https://pr.ibs.re.kr/handle/8788114/2875
ISSN
1567-1739
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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