BROWSE

Related Scientist

cinap's photo.

cinap
나노구조물리연구단
more info

ITEM VIEW & DOWNLOAD

Influence of residual promoter to photoluminescence of CVD grown MoS2

DC Field Value Language
dc.contributor.authorHye Min Oh-
dc.contributor.authorGang Hee Han-
dc.contributor.authorHyun Kim-
dc.contributor.authorMun Seok Jeong-
dc.date.available2016-10-26T06:58:09Z-
dc.date.created2016-10-19-
dc.date.issued2016-09-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2875-
dc.description.abstractMonolayer MoS2 has attracted extensive attention owing to its promising applications in optoelectronic devices. Recently, uniform and highly crystalline monolayer MoS2 was grown through chemical vapor deposition (CVD) using seed materials as a growth promoter. However, residual seed materials can remain on the surface of a monolayer MoS2 flake on a SiO2/Si substrate after growth. Here, we observe drastically increased photoluminescence (PL) intensity at the edge of MoS2 flake where residual particles are attached after repeated laser irradiation. On the other hand, the PL intensity of pure MoS2 remained almost the same. We attribute this to the effect of p-doping of the edge MoS2 by the adsorbed H2O and O2 molecules in the residual particles. The p-doping effect of MoS2 is confirmed by the confocal PL and Raman spectroscopy analysis. © 2016 Elsevier B.V-
dc.description.uri1-
dc.language영어-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectCharge transfer-
dc.subjectChemical vapor deposition-
dc.subjectMolybdenum disulphide-
dc.subjectSeeding promoter-
dc.titleInfluence of residual promoter to photoluminescence of CVD grown MoS2-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000384131600043-
dc.identifier.scopusid2-s2.0-84979641583-
dc.identifier.rimsid57502-
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorHye Min Oh-
dc.contributor.affiliatedAuthorGang Hee Han-
dc.contributor.affiliatedAuthorHyun Kim-
dc.contributor.affiliatedAuthorMun Seok Jeong-
dc.identifier.doi10.1016/j.cap.2016.03.029-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.16, no.9, pp.1223 - 1228-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume16-
dc.citation.number9-
dc.citation.startPage1223-
dc.citation.endPage1228-
dc.date.scptcdate2018-10-01-
dc.description.scptc1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.subject.keywordAuthorCharge transfer-
dc.subject.keywordAuthorChemical vapor deposition-
dc.subject.keywordAuthorMolybdenum disulphide-
dc.subject.keywordAuthorSeeding promoter-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Influence of residual promoter to photoluminescence of CVD grown MoS2.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse