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나노 구조 물리 연구단
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Formation of nanosized monolayer MoS2 by oxygen-assisted thinning of multilayer MoS2

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Title
Formation of nanosized monolayer MoS2 by oxygen-assisted thinning of multilayer MoS2
Author(s)
Guru P. Neupane; Krishna P. Dhakal; Hyun Kim; Jubok Lee; Min Su Kim; Gang Hee Han; Young Hee Lee; Jeongyong Kim
Publication Date
2016-08
Journal
JOURNAL OF APPLIED PHYSICS, v.120, no.5, pp.051702 -
Publisher
AMER INST PHYSICS
Abstract
We report the controllable nanosized local thinning of multi-layer (2 L and 3 L)-thickness MoS2 films down to the monolayer (1 L) thickness using the simple method of annealing in a dry oxygen atmosphere. The annealing temperature was optimized in the range of 240 °C to 270 °C for 1.5 h, and 1 L thick nanosized pits were developed on the uniform film of the 2 L and 3 L MoS2 grown using the chemical vapor deposition method. We characterized the formation of the 1 L nanosized pits using nanoscale confocal photoluminescence (PL) and Raman spectroscopy. We observed that the PL intensity increased and the Raman frequency shifted, representative of the characteristics of 1 L MoS2 films. A subsequent hydrogen treatment process was useful for removing the oxygen-induced doping effect resulting from the annealing. © 2016 Author(s)
URI
https://pr.ibs.re.kr/handle/8788114/2795
ISSN
0021-8979
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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