Formation of nanosized monolayer MoS2 by oxygen-assisted thinning of multilayer MoS2
DC Field | Value | Language |
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dc.contributor.author | Guru P. Neupane | - |
dc.contributor.author | Krishna P. Dhakal | - |
dc.contributor.author | Hyun Kim | - |
dc.contributor.author | Jubok Lee | - |
dc.contributor.author | Min Su Kim | - |
dc.contributor.author | Gang Hee Han | - |
dc.contributor.author | Young Hee Lee | - |
dc.contributor.author | Jeongyong Kim | - |
dc.date.available | 2016-10-06T06:35:27Z | - |
dc.date.created | 2016-08-19 | - |
dc.date.issued | 2016-08 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/2795 | - |
dc.description.abstract | We report the controllable nanosized local thinning of multi-layer (2 L and 3 L)-thickness MoS2 films down to the monolayer (1 L) thickness using the simple method of annealing in a dry oxygen atmosphere. The annealing temperature was optimized in the range of 240 °C to 270 °C for 1.5 h, and 1 L thick nanosized pits were developed on the uniform film of the 2 L and 3 L MoS2 grown using the chemical vapor deposition method. We characterized the formation of the 1 L nanosized pits using nanoscale confocal photoluminescence (PL) and Raman spectroscopy. We observed that the PL intensity increased and the Raman frequency shifted, representative of the characteristics of 1 L MoS2 films. A subsequent hydrogen treatment process was useful for removing the oxygen-induced doping effect resulting from the annealing. © 2016 Author(s) | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Formation of nanosized monolayer MoS2 by oxygen-assisted thinning of multilayer MoS2 | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000383091600003 | - |
dc.identifier.scopusid | 2-s2.0-84978999292 | - |
dc.identifier.rimsid | 56269 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Guru P. Neupane | - |
dc.contributor.affiliatedAuthor | Krishna P. Dhakal | - |
dc.contributor.affiliatedAuthor | Hyun Kim | - |
dc.contributor.affiliatedAuthor | Jubok Lee | - |
dc.contributor.affiliatedAuthor | Min Su Kim | - |
dc.contributor.affiliatedAuthor | Gang Hee Han | - |
dc.contributor.affiliatedAuthor | Young Hee Lee | - |
dc.contributor.affiliatedAuthor | Jeongyong Kim | - |
dc.identifier.doi | 10.1063/1.4958939 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.120, no.5, pp.051702 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 120 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 051702 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 6 | - |
dc.description.scptc | 7 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |