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나노 구조 물리 연구단
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Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials

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Title
Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials
Author(s)
Hyun Jeong; Hye Min Oh; Seungho Bang; Hyeon Jun Jeong; Sung-Jin An; Gang Hee Han; Hyun Kim; Seok Joon Yun; Kim, KK; Jin Cheol Park; Young Hee Lee; Lerondel, G; Mun Seok Jeong
Publication Date
2016-03
Journal
NANO LETTERS, v.16, no.3, pp.1858 - 1862
Publisher
AMER CHEMICAL SOC
Abstract
We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2544
ISSN
1530-6984
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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Metal–Insulator–Semiconductor Diode Consisting of Two-Dimensional Nanomaterials_Nano Letters_정문석.pdfDownload

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