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나노 구조 물리 연구단
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Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries

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Title
Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries
Author(s)
Thuc Hue Ly; David J. Perello; Jiong Zhao; Deng, QM; Hyun Kim; Gang Hee Han; Sang Hoon Chae; Hye Yun Jeong; Young Hee Lee
Publication Date
2016-01
Journal
NATURE COMMUNICATIONS, v.7, no., pp.10426 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Grain boundaries in monolayer transition metal dichalcogenides have unique atomic defect structures and band dispersion relations that depend on the inter-domain misorientation angle. Here, we explore misorientation angle-dependent electrical transport at grain boundaries in monolayer MoS2 by correlating the atomic defect structures of measured devices analysed with transmission electron microscopy and first-principles calculations. Transmission electron microscopy indicates that grain boundaries are primarily composed of 5-7 dislocation cores with periodicity and additional complex defects formed at high angles, obeying the classical low-angle theory for angles <22 degrees. The inter-domain mobility is minimized for angles <9 degrees and increases nonlinearly by two orders of magnitude before saturating at similar to 16 cm(2) V-1 s(-1) around misorientation angle approximate to 20 degrees. This trend is explained via grain-boundary electrostatic barriers estimated from density functional calculations and experimental tunnelling barrier heights, which are approximate to 0.5 eV at low angles and approximate to 0.15 eV at high angles (>= 20 degrees)
URI
http://pr.ibs.re.kr/handle/8788114/2462
DOI
10.1038/ncomms10426
ISSN
2041-1723
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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