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Mark Hermann Rummeli
나노구조물리 연구단
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Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation

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Title
Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation
Author(s)
Song, XJ; Gao, JF; Nie, YF; Gao, T; Sun, JY; Ma, DL; Li, QC; Chen, YB; Jin, CH; Bachmatiuk, A; Mark H. Ruemmeli; Ding, F; Zhang, YF; Liu, ZF
Publication Date
2015-10
Journal
NANO RESEARCH, v.8, no.10, pp.3164 - 3176
Publisher
TSINGHUA UNIV PRESS
Abstract
Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to similar to 72 A mu m in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD. © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015
URI
https://pr.ibs.re.kr/handle/8788114/2289
ISSN
1998-0124
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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