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Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics

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Title
Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics
Author(s)
Donghee Son; Ja Hoon Koo; Jun-Kyul Song; Jaemin Kim; Mincheol Lee; Hyung Joon Shim; Minjoon Park; Lee M.; Kim J.H.; Dae-Hyeong Kim
Publication Date
2015-04
Journal
ACS NANO, v.9, no.5, pp.5585 - 5593
Publisher
AMER CHEMICAL SOC
Abstract
Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches. © 2015 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2056
ISSN
1936-0851
Appears in Collections:
Center for Nanoparticle Research(나노입자 연구단) > Journal Papers (저널논문)
Files in This Item:
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