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Publication Date2019-01
Coulomb scattering mechanism transition in 2D layered MoTe2: effect of high-kappa passivation and Schottky barrier height
Min-Kyu Joo; Yoojoo Yun; Hyunjin Ji, et al
NANOTECHNOLOGY, v.30, no.3, pp.035206
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Publication Date2016-09
Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure
Min-Kyu Joo; Byoung Hee Moon; Hyunjin Ji, et al
NANO LETTERS, v.16, no.10, pp.6383 - 6389
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Publication Date2020-06
Photoinduced Tuning of Schottky Barrier Height in Graphene/MoS2 Heterojunction for Ultrahigh Performance Short Channel Phototransistor
Ilmin Lee; Won Tae Kang; Ji Eun Kim, et al
ACS NANO, v.14, no.6, pp.7574 - 7580
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Publication Date2019-07
Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier
Ilmin Lee; Won Tae Kang; Yong Seon Shin, et al
ACS NANO, v.13, no.7, pp.8392 - 8400