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나노 구조 물리 연구단
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Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier

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Title
Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier
Author(s)
Ilmin Lee; Won Tae Kang; Yong Seon Shin; Young Rae Kim; Ui Yeon Won; Kunnyun Kim; Dinh Loc Duong; Kiyoung Lee; Jinseong Heo; Young Hee Lee; Woo Jong Yu
Publication Date
2019-07
Journal
ACS NANO, v.13, no.7, pp.8392 - 8400
Publisher
AMER CHEMICAL SOC
Abstract
Piezoelectricity of transition metal dichalcogenides (TMDs) under mechanical strain has been theoretically and experimentally studied. Powerful strain sensors using Schottky barrier variation in TMD/metal junctions as a result of the strain-induced lattice distortion and associated ion-charge polarization were demonstrated. However, the nearly fixed work function of metal electrodes limits the variation range of a Schottky barrier. We demonstrate a highly sensitive strain sensor using a variable Schottky barrier in a MoS2/graphene heterostructure field effect transistor (FET). The low density of states near the Dirac point in graphene allows large modulation of the graphene Fermi level and corresponding Schottky barrier in a MoS2/graphene junction by strain-induced polarized charges of MoS2. Our theoretical simulations and temperature-dependent electrical measurements show that the Schottky barrier change is maximized by placing the Fermi level of the graphene at the charge neutral (Dirac) point by applying gate voltage. As a result, the maximum Schottky barrier change (Delta Phi(SB)) and corresponding current change ratio under 0.17% strain reach 118 meV and 978, respectively, resulting in an ultrahigh gauge factor of 575 294, which is approximately 500 times higher than that of metal/TMD junction strain sensors (1160) and 140 times higher than the conventional strain sensors (4036). The ultrahigh sensitivity of graphene/MoS2 heterostructure FETs can be developed for next-generation electronic and mechanical-electronic devices
URI
https://pr.ibs.re.kr/handle/8788114/6142
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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