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Publication Date2022-07
Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications
Kirubasankar, Balakrishnan; Yo Seob Won; Laud Anim Adofo, et al
CHEMICAL SCIENCE, v.13, no.26, pp.7707 - 7738
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Publication Date2016-09
Dependence of Raman and absorption spectra of stacked bilayer MoS2 on the stacking orientation
Seki Park; Hyun Kim; Min Su Kim, et al
OPTICS EXPRESS, v.24, no.19, pp.21551 - 21559
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Publication Date2018-07
Electronics and Optoelectronics Based on Two-Dimensional Materials
Quoc An Vu; Woo Jong Yu
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.73, no.1, pp.1 - 15
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Publication Date2016-11
Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors
Inyeal Lee; Servin Rathi; Dongsuk Lim, et al
ADVANCED MATERIALS, v.28, no.43, pp.9519 - 9525
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Publication Date2016-04
Identifying multiexcitons in Mo S2 monolayers at room temperature
Hyun Seok Lee; Min Su Kim; Hyun Kim, et al
PHYSICAL REVIEW B, v.93, no.14, pp.140409
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Publication Date2015-06
Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films
Jin Cheol Park; Seok Joon Yun; Hyun Kim, et al
ACS NANO, v.9, no.6, pp.6548 - 6554
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Publication Date2017-04
Recent development of two-dimensional transition metal dichalcogenides and their applications
Highly Cited Paper
Wonbong Choi; Nitin Choudhary; Gang Hee Han, et al
MATERIALS TODAY, v.20, no.3, pp.116 - 130
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Publication Date2015-10
Semiconductor–Insulator–Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure
Hyun Jeong; Seungho Bang; Hye Min Oh, et al
ACS NANO, v.9, no.10, pp.10032 - 10038
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Publication Date2020-02
Tailoring Quantum Tunneling in a Vanadium-Doped WSe2/SnSe2 Heterostructure
Sidi Fan; Seok Joon Yun; Woo Jong Yu, et al
ADVANCED SCIENCE, v.7, no.3, pp.1902751
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Publication Date2019-07
Ultrahigh Gauge Factor in Graphene/MoS2 Heterojunction Field Effect Transistor with Variable Schottky Barrier
Ilmin Lee; Won Tae Kang; Yong Seon Shin, et al
ACS NANO, v.13, no.7, pp.8392 - 8400