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나노 구조 물리 연구단
나노구조물리 연구단
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Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes

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Title
Direct growth of GaN layer on carbon nanotube-graphene hybrid structure and its application for light emitting diodes
Author(s)
Seo, TH; Park, AH; Park, S; Yong Hwan Kim; Gun Hee Lee; Kim, MJ; Mun Seok Jeong; Young Hee Lee; Hahn, YB; Suh, EK
Publication Date
2015-01
Journal
SCIENTIFIC REPORTS, v.5, no., pp.7747 -
Publisher
NATURE PUBLISHING GROUP
Abstract
We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SWCNTs on graphene act as nucleation seeds, resulting in the formation of kink bonds along SWCNTs with the basal plane of the substrate. In the x-ray diffraction, Raman and photoluminescence spectra, high crystalline quality of GaN layer grown on CGH/sapphire was observed due to the reduced threading dislocation and efficient relaxation of residual compressive strain caused by lateral overgrowth process. When applied to the LED structure, the current-voltage characteristics and electroluminescence (EL) performance exhibit that blue LEDs fabricated on CGH/sapphire well-operate at high injection currents and uniformly emit over the whole emission area. We expect that CGH can be applied for the epitaxial growth of GaN on various substrates such as Si and MgO, which can be a great advantage in electrical and thermal properties of optical devices fabricated on them.
URI
http://pr.ibs.re.kr/handle/8788114/1795
DOI
10.1038/srep07747
ISSN
2045-2322
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
Direct growth of etch pit-free GaN crystals on few-layer graphene.pdfDownload

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