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Selective Crystallization of Ferroelectric HfxZr1- xO2via Excimer Laser Annealing
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- Title
- Selective Crystallization of Ferroelectric HfxZr1- xO2via Excimer Laser Annealing
- Author(s)
- Song, M.S.; Park, K.; Lee, K.; Cho, J.W.; Lee, T.Y.; Jungwon Park; Chae, S.C.
- Publication Date
- 2023-01
- Journal
- ACS Applied Electronic Materials, v.5, no.1, pp.117 - 122
- Publisher
- American Chemical Society
- Abstract
- Herein, we report the ferroelectricity of HfxZr1-xO2 (HZO) thin films crystallized via excimer laser annealing at 25 °C under atmospheric conditions. We characterized the structure and antiferroelectric/ferroelectric properties of HZO thin films using X-ray diffraction and standard polarization-voltage hysteresis. The laser-annealed Hf0.5Zr0.5O2 thin film was gradually crystallized with increasing laser pulse number. The HZO thin film series exhibited systemic changes in antiferroelectric/ferroelectric properties with variations in Zr concentration. In addition, we constructed a phase diagram of laser-annealed HZO thin films. © 2023 American Chemical Society.
- ISSN
- 2637-6113
- Appears in Collections:
- Center for Nanoparticle Research(나노입자 연구단) > 1. Journal Papers (저널논문)
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