Selective Crystallization of Ferroelectric HfxZr1- xO2via Excimer Laser Annealing
DC Field | Value | Language |
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dc.contributor.author | Song, M.S. | - |
dc.contributor.author | Park, K. | - |
dc.contributor.author | Lee, K. | - |
dc.contributor.author | Cho, J.W. | - |
dc.contributor.author | Lee, T.Y. | - |
dc.contributor.author | Jungwon Park | - |
dc.contributor.author | Chae, S.C. | - |
dc.date.accessioned | 2023-04-04T22:10:04Z | - |
dc.date.available | 2023-04-04T22:10:04Z | - |
dc.date.created | 2023-01-27 | - |
dc.date.issued | 2023-01 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/13151 | - |
dc.description.abstract | Herein, we report the ferroelectricity of HfxZr1-xO2 (HZO) thin films crystallized via excimer laser annealing at 25 °C under atmospheric conditions. We characterized the structure and antiferroelectric/ferroelectric properties of HZO thin films using X-ray diffraction and standard polarization-voltage hysteresis. The laser-annealed Hf0.5Zr0.5O2 thin film was gradually crystallized with increasing laser pulse number. The HZO thin film series exhibited systemic changes in antiferroelectric/ferroelectric properties with variations in Zr concentration. In addition, we constructed a phase diagram of laser-annealed HZO thin films. © 2023 American Chemical Society. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Selective Crystallization of Ferroelectric HfxZr1- xO2via Excimer Laser Annealing | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000914863600001 | - |
dc.identifier.scopusid | 2-s2.0-85146133972 | - |
dc.identifier.rimsid | 79763 | - |
dc.contributor.affiliatedAuthor | Jungwon Park | - |
dc.identifier.doi | 10.1021/acsaelm.2c01555 | - |
dc.identifier.bibliographicCitation | ACS Applied Electronic Materials, v.5, no.1, pp.117 - 122 | - |
dc.relation.isPartOf | ACS Applied Electronic Materials | - |
dc.citation.title | ACS Applied Electronic Materials | - |
dc.citation.volume | 5 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 117 | - |
dc.citation.endPage | 122 | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | ZRO2 | - |
dc.subject.keywordAuthor | antiferroelectricity | - |
dc.subject.keywordAuthor | crystallization | - |
dc.subject.keywordAuthor | excimer laser annealing | - |
dc.subject.keywordAuthor | ferroelectricity | - |
dc.subject.keywordAuthor | hafnium oxide | - |
dc.subject.keywordAuthor | zirconium oxide | - |