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Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors

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Title
Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors
Author(s)
Park, Heekyeong; Lee, Jiyoul; Han, Gyuchull; AlMutairi, AbdulAziz; Kim, Young-Hoon; Lee, Jaichan; Young-Min Kim; Kim, Young Jun; Yoon, Youngki; Kim, Sunkook
Publication Date
2021-09
Journal
Communications Materials, v.2, no.1
Publisher
Springer Nature
Abstract
© 2022 Springer Nature Limited. Indirect bandgap of multilayer molybdenum disulfide has been recognized as a major hindrance to high responsivity of MoS2 phototransistors. Here, to overcome this fundamental limitation, we propose a structural engineering of MoS2 via nano-patterning using block copolymer lithography. The fabricated nanoporous MoS2, consisting of periodic hexagonal arrays of hexagon nanoholes, includes abundant edges having a zigzag configuration of atomic columns with molybdenum and sulfur atoms. These exposed zigzag edges are responsible for multiple trap states in the bandgap region, as confirmed by photo-excited charge-collection spectroscopy measurements on multilayer nanoporous MoS2 phototransistors, showing that in-gap states only near the valence band can result in a photogating effect. The effect of nano-patterning is therefore to significantly enhance the responsivity of multilayer nanoporous MoS2 phototransistors, exhibiting an ultra-high photoresponsivity of 622.2 A W−1. Our nano-patterning of MoS2 for photosensing application paves a route to structural engineering of two-dimensional materials for highly sensitive and responsive optoelectronic devices.
URI
https://pr.ibs.re.kr/handle/8788114/12088
DOI
10.1038/s43246-021-00197-0
ISSN
2662-4443
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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