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나노 구조 물리 연구단
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Emission wavelength tuning of porous silicon with ultra-thin ZnO capping layers by plasma-assisted molecular beam epitaxy

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Title
Emission wavelength tuning of porous silicon with ultra-thin ZnO capping layers by plasma-assisted molecular beam epitaxy
Author(s)
Soaram Kim; Min Su Kim; Giwoong Nam; Hyunggil Park; Hyunsik Yoon; Jae-Young Leem
Publication Date
2014-02
Journal
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.9, no.1, pp.112 - 116
Publisher
AMER SCIENTIFIC PUBLISHERS
Abstract
Porous silicon (PS) was prepared by electrochemical anodization. Ultra-thin zinc oxide (ZnO) capping layers were deposited on the PS by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of the ZnO capping layers on the properties of the as-prepared PS were investigated using scanning electron microscopy (SEM) and photoluminescence (PL). The as-prepared PS has circular pores over the entire surface. Its structure is similar to a sponge where the quantum confinement effect (QCE) plays a fundamental role. It was found that the dominant red emission of the porous silicon was tuned to white light emission by simple deposition of the ultra-thin ZnO capping alyers. Specifically, the intensity of white light emission was observed to be enhanced by increasing the growth time from 1 to 3 min.
URI
https://pr.ibs.re.kr/handle/8788114/1116
ISSN
1555-130X
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Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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