BROWSE

Related Scientist

cinap's photo.

cinap
나노구조물리연구단
more info

ITEM VIEW & DOWNLOAD

Emission wavelength tuning of porous silicon with ultra-thin ZnO capping layers by plasma-assisted molecular beam epitaxy

DC Field Value Language
dc.contributor.authorSoaram Kim-
dc.contributor.authorMin Su Kim-
dc.contributor.authorGiwoong Nam-
dc.contributor.authorHyunggil Park-
dc.contributor.authorHyunsik Yoon-
dc.contributor.authorJae-Young Leem-
dc.date.available2015-04-20T06:13:04Z-
dc.date.created2014-11-26-
dc.date.issued2014-02-
dc.identifier.issn1555-130X-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1116-
dc.description.abstractPorous silicon (PS) was prepared by electrochemical anodization. Ultra-thin zinc oxide (ZnO) capping layers were deposited on the PS by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of the ZnO capping layers on the properties of the as-prepared PS were investigated using scanning electron microscopy (SEM) and photoluminescence (PL). The as-prepared PS has circular pores over the entire surface. Its structure is similar to a sponge where the quantum confinement effect (QCE) plays a fundamental role. It was found that the dominant red emission of the porous silicon was tuned to white light emission by simple deposition of the ultra-thin ZnO capping alyers. Specifically, the intensity of white light emission was observed to be enhanced by increasing the growth time from 1 to 3 min.-
dc.description.uri1-
dc.language영어-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectZinc Oxide, Porous Silicon Capping Layers, Molecular Beam Epitaxy, Photoluminescence-
dc.titleEmission wavelength tuning of porous silicon with ultra-thin ZnO capping layers by plasma-assisted molecular beam epitaxy-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000338091500021-
dc.identifier.scopusid2-s2.0-84918551009-
dc.identifier.rimsid16551ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorMin Su Kim-
dc.identifier.doi10.1166/jno.2014.1566-
dc.identifier.bibliographicCitationJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.9, no.1, pp.112 - 116-
dc.citation.titleJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS-
dc.citation.volume9-
dc.citation.number1-
dc.citation.startPage112-
dc.citation.endPage116-
dc.date.scptcdate2018-10-01-
dc.description.wostc1-
dc.description.scptc1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Emission wavelength tuning.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse