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나노 구조 물리 연구단
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Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phse sulfur precursor Highly Cited Paper

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Title
Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phse sulfur precursor
Author(s)
Lee.Y; Lee.J; Bark.H; Oh.IK; Ryu.GH; Zonghoon Lee; Kim.H; Cho.JH; Ahn.JH; Changgu Lee
Publication Date
2014-03
Journal
NANOSCALE, v.6, no.5, pp.2821 - 2826
Publisher
ROYAL SOC CHEMISTRY
Abstract
We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V (1) s (1) (mean mobility value of 0.07 cm(2) V-1 s(-1)), and reliable operation.
URI
https://pr.ibs.re.kr/handle/8788114/1085
ISSN
2040-3364
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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