Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phse sulfur precursor
DC Field | Value | Language |
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dc.contributor.author | Lee.Y | - |
dc.contributor.author | Lee.J | - |
dc.contributor.author | Bark.H | - |
dc.contributor.author | Oh.IK | - |
dc.contributor.author | Ryu.GH | - |
dc.contributor.author | Zonghoon Lee | - |
dc.contributor.author | Kim.H | - |
dc.contributor.author | Cho.JH | - |
dc.contributor.author | Ahn.JH | - |
dc.contributor.author | Changgu Lee | - |
dc.date.available | 2015-04-20T06:06:34Z | - |
dc.date.created | 2014-08-11 | - |
dc.date.issued | 2014-03 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/1085 | - |
dc.description.abstract | We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V (1) s (1) (mean mobility value of 0.07 cm(2) V-1 s(-1)), and reliable operation. | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | MOS2 ATOMIC LAYERS | - |
dc.subject | LARGE-AREA | - |
dc.subject | THIN-LAYERS | - |
dc.subject | GRAPHENE | - |
dc.subject | MONOLAYER | - |
dc.subject | OPTOELECTRONICS | - |
dc.subject | SULFURIZATION | - |
dc.subject | ELECTRONICS | - |
dc.subject | TRANSISTORS | - |
dc.subject | GROWTH | - |
dc.title | Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phse sulfur precursor | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000332127200041 | - |
dc.identifier.scopusid | 2-s2.0-84894641277 | - |
dc.identifier.rimsid | 431 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Changgu Lee | - |
dc.identifier.doi | 10.1039/c3nr05993f | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.6, no.5, pp.2821 - 2826 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 6 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 2821 | - |
dc.citation.endPage | 2826 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 98 | - |
dc.description.scptc | 100 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | MOS2 ATOMIC LAYERS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | THIN-LAYERS | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | OPTOELECTRONICS | - |
dc.subject.keywordPlus | SULFURIZATION | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | GROWTH | - |