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나노 구조 물리 연구단
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Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors

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Title
Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors
Author(s)
Sang Won Lee; Dongseok Suh; Si Young Lee; Young Hee Lee
Publication Date
2014-04
Journal
APPLIED PHYSICS LETTERS, v.104, no.16, pp.163506 -
Publisher
AMER INST PHYSICS
Abstract
A prior requirement of any developed transistor for practical use is the stability test. Random network carbon nanotube-thin film transistor (CNT-TFT) was fabricated on SiO2/Si. Gate bias stress stability was investigated with various passivation layers of HfO2 and Al 2O3. Compared to the threshold voltage shift without passivation layer, the measured values in the presence of passivation layers were reduced independent of gate bias polarity except HfO2 under positive gate bias stress (PGBS). Al2O3 capping layer was found to be the best passivation layer to prevent ambient gas adsorption, while gas adsorption on HfO2 layer was unavoidable, inducing surface charges to increase threshold voltage shift in particular for PGBS. This high performance in the gate bias stress test of CNT-TFT even superior to that of amorphous silicon opens potential applications to active TFT industry for soft electronics. © 2014 AIP Publishing LLC.
URI
http://pr.ibs.re.kr/handle/8788114/1063
DOI
10.1063/1.4873316
ISSN
0003-6951
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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