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Publication Date2019-01 Coulomb scattering mechanism transition in 2D layered MoTe2: effect of high-kappa passivation and Schottky barrier height
Min-Kyu Joo; Yoojoo Yun; Hyunjin Ji, et al
NANOTECHNOLOGY, v.30, no.3, pp.035206
Publication Date2018-08 Electrothermal Local Annealing via Graphite Joule Heating on Two-Dimensional Layered Transistors
Yoojoo Yun; Jeongmin Park; Hyun Kim, et al
ACS APPLIED MATERIALS & INTERFACES, v.10, no.30, pp.25638 - 25643
Publication Date2020-08 High-mobility junction field-effect transistor via graphene/MoS2 heterointerface
Taesoo Kim; Sidi Fan; Sanghyub Lee, et al
SCIENTIFIC REPORTS, v.10, no.1, pp.13101
Publication Date2019-10 Impact of Heat Treatment on a Hetero-Stacked MoS2/h-BN Field-Effect Transistor
Hyunjin Ji; Hojoon Yi; Huong Thi Thanh Nguyen, et al
IEEE ELECTRON DEVICE LETTERS, v.40, no.10, pp.1626 - 1629
Publication Date2019-01 Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating
Joonggyu Kim; Junhong Na; Min-Kyu Joo, et al
ACS APPLIED MATERIALS & INTERFACES, v.11, no.4, pp.4226 - 4232
Publication Date2019-08 Temperature-Dependent Opacity of the Gate Field Inside MoS2 Field-Effect Transistors
Hyunjin Ji; Mohan Kumar Ghimire; Gwanmu Lee, et al
ACS APPLIED MATERIALS & INTERFACES, v.11, no.32, pp.29022 - 29028

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