Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating

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Title
Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating
Author(s)
Joonggyu Kim; Junhong Na; Min-Kyu Joo; Dongseok Suh
Publication Date
2019-01
Journal
ACS APPLIED MATERIALS & INTERFACES, v.11, no.4, pp.4226 - 4232
Publisher
AMER CHEMICAL SOC
Abstract
The advanced Hall magnetic sensor using an ion-gated graphene field-effect transistor demonstrates a high current-normalized sensitivity larger than 3000 V/AT and low operation voltages smaller than 0.5 V. From commercially available grapheneon-SiO2 wafers, large-area arrays of ion-gated graphene Hall element (ig-GHE) samples are prepared through complementary metal-oxide-semiconductor-compatible fabrication processes except the final addition of ionic liquid electrolyte covering the exposed graphene channel and the separate gate-electrode area. The enhanced carrier tunability by ionic gating enables this ig-GHE device to be extremely sensitive to magnetic fields in low-voltage-operation regimes. Further electrical characterization indicates that the operation window is limited by the nonuniform carrier concentration over the channel under high bias conditions. The drain-current-normalized magnetic resolution of the device measured using the low-frequency noise technique is comparable to the previously reported values despite its significant low power consumption. © 2019 American Chemical Society.
URI
https://pr.ibs.re.kr/handle/8788114/5762
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
Files in This Item:
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