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Publication Date2019-01
Coulomb scattering mechanism transition in 2D layered MoTe2: effect of high-kappa passivation and Schottky barrier height
Min-Kyu Joo; Yoojoo Yun; Hyunjin Ji, et al
NANOTECHNOLOGY, v.30, no.3, pp.035206
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Publication Date2020-01
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS2 van der Waals Heterostructure
Shin, Gwang Hyuk; Lee, Geon-Beom; Eun-Su An, et al
ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112
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Publication Date2016-07
Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics
Ji H.; Min-Kyu Joo; Yoojoo Yun, et al
ACS APPLIED MATERIALS & INTERFACES, v.8, no.29, pp.19092 - 19099
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Publication Date2016-07
Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure
Jin J.E.; Choi J.H.; Yun H., et al
ACS APPLIED MATERIALS & INTERFACES, v.8, no.28, pp.18513 - 18518
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Publication Date2017-08
Ultrastretchable Analog/Digital Signal Transmission Line with Carbon Nanotube Sheets
Yourack Lee; Min-Kyu Joo; Viet Thong Le, et al
ACS APPLIED MATERIALS & INTERFACES, v.9, no.31, pp.26286 - 26292
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Publication Date2017-02
Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer
Min-Kyu Joo; Byoung Hee Moon; Hyunjin Ji, et al
ACS APPLIED MATERIALS & INTERFACES, v.9, no.5, pp.5006 - 5013