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나노 구조 물리 연구단
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Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure

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Title
Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure
Author(s)
Jin J.E.; Choi J.H.; Yun H.; Jang H.-K.; Lee B.C.; Choi A.; Min-Kyu Joo; Dettlaff-Weglikowska U.; Roth S.; Lee S.W.; Lee J.W.; Kim G.T.
Publication Date
2016-07
Journal
ACS APPLIED MATERIALS & INTERFACES, v.8, no.28, pp.18513 - 18518
Publisher
AMER CHEMICAL SOC
Abstract
In this work, graphene field effect transistors (FETs) were fabricated on a trench structure made by carbonized poly(methylmethacrylate) to modify the graphene surface. The trench-structured devices showed different characteristics depending on the channel orientation and the pitch size of the trenches as well as channel area in the FETs. Periodic corrugations and barriers of suspended graphene on the trench structure were measured by atomic force microscopy and electrostatic force microscopy. Regular barriers of 160 mV were observed for the trench structure with graphene. To confirm the transfer mechanism in the FETs depending on the channel orientation, the ratio of experimental mobility (3.6-3.74) was extracted from the current-voltage characteristics using equivalent circuit simulation. It is shown that the number of barriers increases as the pitch size decreases because the number of corrugations increases from different trench pitches. The noise for the 140 nm pitch trench is 1 order of magnitude higher than that for the 200 nm pitch trench. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2809
ISSN
1944-8244
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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