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원자제어 저차원 전자계 연구단
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High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS2 van der Waals Heterostructure

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Title
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS2 van der Waals Heterostructure
Author(s)
Shin, Gwang Hyuk; Lee, Geon-Beom; Eun-Su An; Park, Cheolmin; Jin, Hyeok Jun; Lee, Khang June; Oh, Dong Sik; Jun Sung Kim; Choi, Yang-Kyu; Choi, Sung-Yool
Subject
GaS, ; heterostructure, ; logic operation, ; low-frequency noise, ; MoS2, ; transistor
Publication Date
2020-01
Journal
ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112
Publisher
AMER CHEMICAL SOC
Abstract
© 2020 American Chemical Society.This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals heterostructure, MoS2 channel, and GaS gate insulator. The transistor exhibits a subthreshold swing of 63 mV/dec, an on/off ratio over 106 within a gate voltage of 0.4 V, and peak mobility of 83 cm2/(V s) at room temperature. The low-frequency noise characteristics were investigated and described by the Hooge mobility fluctuation model. The results suggest that the van der Waals heterostructure of 2D semiconductors can produce a high-performing interface without dangling bonds and defects caused by lattice mismatch. Furthermore, a logic inverter and a NAND gate are demonstrated, with an inverter voltage gain of 14.5, which is higher than previously reported by MoS2-based transistors with oxide dielectrics. Therefore, this transistor based on van der Waals heterostructure exhibits considerable potential in digital logic applications with low-power integrated circuits
URI
https://pr.ibs.re.kr/handle/8788114/8739
DOI
10.1021/acsami.9b20077
ISSN
1944-8244
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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