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JIN, Kyung-Hwan

Center: 원자제어 저차원 전자계 연구단

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Results 1-7 of 7

Publication Date2023-01 Metrology of band topology via resonant inelastic x-ray scattering
Sangjin Lee; Kyung-Hwan Jin; Kang, Byungmin, et al

Physical Review B, v.107, no.4
Publication Date2022-10 Tunable Mott Dirac and Kagome Bands Engineered on 1T-TaS2
Dongheon Lee; Kyung-Hwan Jin; Liu, Feng, et al

NANO LETTERS, v.22, no.19, pp.7902 - 7909
Publication Date2021-11-24 Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer
Kyung-Hwan Jin; Eunseok Oh; Roland Stania, et al

Nano Letters, v.21, no.22, pp.9468 - 9475
Publication Date2021-05-13 Distinguishing a Mott Insulator from a Trivial Insulator with Atomic Adsorbates
Jinwon Lee; Kyung-Hwan Jin; Han Woong Yeom

Physical Review Letters, v.126, no.19
Publication Date2021-03-26 Prediction of intrinsic topological superconductivity in Mn-doped GeTe monolayer from first-principles
Zhang, Xiaoming; Kyung-Hwan Jin; Mao, Jiahao, et al

NPJ COMPUTATIONAL MATERIALS, v.7, no.1
Publication Date2020-08 Honeycomb-Lattice Mott Insulator on Tantalum Disulphide
Jinwon Lee; Kyung-Hwan Jin; Andrei Catuneanu, et al

PHYSICAL REVIEW LETTERS, v.125, no.9, pp.096403
Publication Date2020-07 1D topological phases in transition-metal monochalcogenide nanowires
Kyung-Hwan Jin; Feng Liu

NANOSCALE, v.12, no.27, pp.14661 - 14667

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