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Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency

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Title
Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
Author(s)
Lee, Kyoungjun; Kunwoo Park; Lee, Hyun-Jae; Song, Myeong Seop; Lee, Kyu Cheol; Namkung, Jin; Lee, Jun Hee; Jungwon Park; Chae, Seung Chul
Publication Date
2021-03
Journal
SCIENTIFIC REPORTS, v.11, no.1
Publisher
Nature Research
Abstract
© 2021, The Author(s).Investigations concerning oxygen deficiency will increase our understanding of those factors that govern the overall material properties. Various studies have examined the relationship between oxygen deficiency and the phase transformation from a nonpolar phase to a polar phase in HfO2 thin films. However, there are few reports on the effects of oxygen deficiencies on the switching dynamics of the ferroelectric phase itself. Herein, we report the oxygen- deficiency induced enhancement of ferroelectric switching properties of Si-doped HfO2 thin films. By controlling the annealing conditions, we controlled the oxygen deficiency concentration in the ferroelectric orthorhombic HfO2 phase. Rapid high-temperature (800 °C) annealing of the HfO2 film accelerated the characteristic switching speed compared to low-temperature (600 °C) annealing. Scanning transmission electron microscopy and electron energy-loss spectroscopy (EELS) revealed that thermal annealing increased oxygen deficiencies, and first-principles calculations demonstrated a reduction of the energy barrier of the polarization flip with increased oxygen deficiency. A Monte Carlo simulation for the variation in the energy barrier of the polarization flipping confirmed the increase of characteristic switching speed.
URI
https://pr.ibs.re.kr/handle/8788114/9866
DOI
10.1038/s41598-021-85773-7
ISSN
2045-2322
Appears in Collections:
Center for Nanoparticle Research(나노입자 연구단) > 1. Journal Papers (저널논문)
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