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Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO3 films

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Title
Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO3 films
Author(s)
Donghan Kim; Byungmin Sohn; Minsoo Kim; Sungsoo Hahn; Youngdo Kim; Jong Hyuk Kim; Young Jai Choi; Changyoung Kim
Publication Date
2021-04
Journal
Applied Physics Letters, v.118, no.17
Publisher
American Institute of Physics Inc.
Abstract
© 2021 Author(s).Ferromagnetism and exotic topological structures in SrRuO3 (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin regime. We investigate the AHE and hump structure in the Hall resistivity of SRO ultra-thin films with an SrTiO3 (STO) capping layer and ionic liquid gating. STO capping results in sign changes in the AHE and modulation of the hump structure. In particular, the hump structure in the Hall resistivity is strongly modulated and even vanishes in STO-capped 4 unit cell films. In addition, the conductivity of STO-capped SRO ultra-thin films is greatly enhanced with restored ferromagnetism. We also performed ionic liquid gating to modulate the electric field at SRO/STO interface. Drastic changes in the AHE and hump structure are observed with different gate voltages. Our study shows that the hump structure as well as the AHE can be controlled by tuning inversion symmetry and the electric field at the interface.
URI
https://pr.ibs.re.kr/handle/8788114/9723
DOI
10.1063/5.0050163
ISSN
0003-6951
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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