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The effect of the dopant's reactivity for high-performance 2D MoS2 thin-film transistor

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Title
The effect of the dopant's reactivity for high-performance 2D MoS2 thin-film transistor
Author(s)
Hanleem Lee; Sora Bak; Joosung Kim; Hyoyoung Lee
Publication Date
2021-01
Journal
NANO RESEARCH, v.14, no.1, pp.198 - 204
Publisher
TSINGHUA UNIV PRESS
Abstract
© 2020 Springer Nature Switzerland AG. Part of Springer Nature. There are many studies on the solution-processed thin-film transistor (TFT) using transition metal dichalcogenide (TMD) materials. However, it is hard to control the electrical property of chemically exfoliated TMD materials compared to the chemical vapor deposition TMD. An investigation into the electrical modulation behavior of exfoliated two-dimensional (2D) material is important to fabricate well-modulated electronic devices via solution processing. Here, we report the effects of reactivity of organic dopants on MoS(2)and investigate how the chemical doping behavior influences the electrical properties of MoS2. The band state of dopants, which is related to the electron-withdrawing and donating behavior of chemical dopant, provides a proportional shift in the threshold voltages (V-th) of their field-effect transistors (FETs). However, on/off current ratio (I-on/I-off) and mobility (mu) are strongly influenced by the defect density depending on the reactivity of doping reaction, rather than the band state of organic dopants. Through the in-depth study on the doping reaction, we fabricate a FET and a TFT, having high mobility and a relatively high on/off ratio (10(4)) using a solution process
URI
https://pr.ibs.re.kr/handle/8788114/9513
DOI
10.1007/s12274-020-3068-2
ISSN
1998-0124
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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