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Layer-Dependent Band Structure of Ternary Metal Chalcogenides: Thickness-Controlled Hexagonal FeIn2S4

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Title
Layer-Dependent Band Structure of Ternary Metal Chalcogenides: Thickness-Controlled Hexagonal FeIn2S4
Author(s)
Hyunjung Kim; Xinghui Liu; Meeree Kim; Yunhee Cho; JinJu Lee; Thi Anh Le; Ngoc Quang Tran; Amol Jadhav; Hyoyoung Lee
Publication Date
2021-01
Journal
CHEMISTRY OF MATERIALS, v.33, no.1, pp.164 - 176
Publisher
AMER CHEMICAL SOC
Abstract
Two-dimensional (2D) transition metal dichalcogenides have received considerable attention due to their exotic electrical, chemical, and physical properties. Here, we report a layer-dependent band structure of a 2D semiconducting ternary metal chalcogenide (TMC), hexagonal FeIn2S4 (hFIS), which is prepared through thickness-controlled colloidal solution synthesis. The controlled dissociation rate of chalcogen precursors caused the growth of the different thicknesses of hFIS, which is coincident with mechanisms established in conventional 2D nanomaterial colloidal synthesis. The various thickness-dependent band structures of hFIS were investigated from the corresponding optical band gap and redox potentials. The unveiled layerdependent band structure of hFIS showed band gaps of approximately 1.02, 1.26, and 1.52 eV, corresponding to synthesis of the 7-8, 5-6, and 2-3 layers, respectively. This study will contribute to the exploration of other layer-dependent TMCs (MIn2X4, M = Fe, Co, Mn, and Zn and X = S, Se, and Te) for new optical and electronic device applications.
URI
https://pr.ibs.re.kr/handle/8788114/9505
DOI
10.1021/acs.chemmater.0c03146
ISSN
0897-4756
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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