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Detection of hidden localized states by the quantum Hall effect in graphene

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Title
Detection of hidden localized states by the quantum Hall effect in graphene
Author(s)
Chau, Tuan Khanh; Suh, Dongseok; Kang, Haeyong
Publication Date
2021-03
Journal
Current Applied Physics, v.23, pp.26 - 29
Publisher
Elsevier B.V.
Abstract
© 2021 Korean Physical SocietyWe fabricated a monolayer graphene transistor device in the shape of the Hall-bar structure, which produced an exactly symmetric signal following the sample geometry. During electrical characterization, the device showed the standard integer quantum Hall effect of monolayer graphene except for a broader range of several quantum Hall plateaus corresponding to small filling factors in the electron region. We investigated this anomaly on the basis of localized states owing to the presence of possible electron traps, whose energy levels were estimated to be near the Dirac point. In particular, the inequality between the filling of electrons and holes was ascribed to the requirement of excess electrons to fill the trap levels. The relations between the quantum Hall plateau, Landau level, and filling factor were carefully analyzed to reveal the details of the localized states in this graphene device.
URI
https://pr.ibs.re.kr/handle/8788114/9499
DOI
10.1016/j.cap.2020.12.016
ISSN
1567-1739
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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