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나노 구조 물리 연구단
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Chemical vapor deposition of twisted bilayer and few-layer MoSe2 over SiOx substrates

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Title
Chemical vapor deposition of twisted bilayer and few-layer MoSe2 over SiOx substrates
Author(s)
Alicja Bachmatiuk; Abelin R.F.; Huy Ta Quang; Trzebicka B.; Eckert J.; Mark Hermann Rummeli
Publication Date
2014-09
Journal
NANOTECHNOLOGY, v.25, no.36, pp.365603 -
Publisher
IOP PUBLISHING LTD
Abstract
The chemical vapor deposition of monolayer and few-layer transition metal dichalcogenides is a rapidly developing area of materials science due to the exciting electrical, optical, thermal and mechanical properties of transition metal dichalcogenides in their layered form. These properties make these innovative materials potentially relevant to wide-ranging commercial applications. One of these promising materials is MoSe2; however, just recently, a few research groups have been able to demonstrate its synthesis via chemical vapor deposition. Moreover, only oriented few-layer MoSe2 has been exhibited by synthetically formed material using chemical vapor deposition thus far. Here, we confirm twisted-layer MoSe2 can also form during chemical vapor deposition. Twisted-layer transition metal dichalcogenides alter their properties as compared to their oriented counterparts. Therefore, twisted-layer structures are of interest because they can tune their properties.
URI
https://pr.ibs.re.kr/handle/8788114/915
ISSN
0957-4484
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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