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Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

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Title
Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation
Author(s)
Il Kim, D; Hong, YK; Lee, SH; Jeongyong Kim; Joo, J
Publication Date
2014-09
Journal
CURRENT APPLIED PHYSICS, v.14, no.9, pp.1228 - 1233
Publisher
ELSEVIER SCIENCE BV
Abstract
ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 mm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 1017e1.0 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 U cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.
URI
https://pr.ibs.re.kr/handle/8788114/910
ISSN
1567-1739
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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