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나노 구조 물리 연구단
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Effects of doping on transport properties in Cu-Bi-Se-based thermoelectric materials

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Title
Effects of doping on transport properties in Cu-Bi-Se-based thermoelectric materials
Author(s)
Jae-Yeol Hwang; Mun H.A.; Kim S.I.; Lee K.M.; Kim J.; Lee K.H.; Sung Wng Kim
Publication Date
2014-12
Journal
INORGANIC CHEMISTRY, v.53, no.24, pp.12732 - 12738
Publisher
AMER CHEMICAL SOC
Abstract
The thermoelectric properties of Zn-, In-, and Idoped Cu1.7Bi4.7Se8 pavonite homologues were investigated in the temperature range from 300 to 560 K. On the basis of the comprehensive structural analysis using Rietveld refinement of synchrotron radiation diffraction for Cux+yBi5−ySe8 compounds with the inherently disordered crystallographic sites, we demonstrate a doping strategy that provides a simultaneous control for enhanced electronic transport properties by the optimization of carrier concentration and exceptionally low lattice thermal conductivity by the formation of point defects. Substituted Zn or In ions on Cu site was found to be an effective phonon scattering center as well as an electron donor, while doping on Bi site showed a moderate effect for phonon scattering. In addition, we achieved largely enhanced power factor in small amount of In doping on Cu site by increased electrical conductivity and moderately decreased Seebeck coefficient. Coupled with a low lattice thermal conductivity originated from intensified point defect phonon scattering by substituted In ions with host Cu ions, a thermoelectric figure of merit ZT of 0.24 at 560 K for Cu1.6915In0.0085Bi4.7Se8 was achieved, yielding 30% enhancement compared with that of a pristine Cu1.7Bi4.7Se8 at the same temperature.
URI
https://pr.ibs.re.kr/handle/8788114/849
ISSN
0020-1669
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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